Manufacturer Part Number
BSZ042N06NSATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with low on-resistance and optimized charge for high-frequency switching applications
Product Features and Performance
Low on-resistance (4.2 mOhm @ 20 A, 10 V)
Low gate charge (27 nC @ 10 V)
60 V drain-source voltage rating
Supports continuous drain current up to 17 A (at 25°C ambient) and 40 A (at 100°C case temperature)
Wide operating temperature range of -55°C to 150°C
Product Advantages
Optimized for high-frequency switching
Excellent thermal performance
Robust design for reliable operation
Key Technical Parameters
Drain-source voltage (Vdss): 60 V
Gate-source voltage (Vgs): ±20 V
On-resistance (Rds(on)): 4.2 mOhm @ 20 A, 10 V
Continuous drain current (Id): 17 A (at 25°C ambient), 40 A (at 100°C case temperature)
Input capacitance (Ciss): 2000 pF @ 30 V
Power dissipation (Max): 2.1 W (at 25°C ambient), 69 W (at 100°C case temperature)
Quality and Safety Features
RoHS3 compliant
Conformity to relevant safety standards
Compatibility
Surface mount (SMD) package
Suitable for high-frequency switching applications
Application Areas
Power supplies
Motor drives
Switching converters
Industrial and consumer electronics
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgrade options may be available from Infineon Technologies.
Key Reasons to Choose This Product
Excellent performance in high-frequency switching applications
Low on-resistance and gate charge for efficient operation
Robust design and wide operating temperature range for reliable performance
RoHS3 compliance for environmentally friendly applications
Compatibility with standard surface mount assembly processes
