Manufacturer Part Number
BSZ040N04LSGATMA1
Manufacturer
Infineon Technologies
Introduction
A high-performance N-channel MOSFET transistor from Infineon Technologies, part of the OptiMOS series.
Product Features and Performance
40V drain-to-source voltage rating
4mΩ maximum on-resistance at 20A, 10V
18A continuous drain current at 25°C ambient temperature
40A continuous drain current at 25°C case temperature
5100pF maximum input capacitance at 20V
1W maximum power dissipation at 25°C ambient temperature
69W maximum power dissipation at 25°C case temperature
-55°C to 150°C operating temperature range
Product Advantages
Low on-resistance for high efficiency
High current handling capability
Compact surface-mount package
Suitable for a wide range of applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 4mΩ @ 20A, 10V
Drain Current (Id): 18A (Ta), 40A (Tc)
Input Capacitance (Ciss): 5100pF @ 20V
Power Dissipation: 2.1W (Ta), 69W (Tc)
Threshold Voltage (Vgs(th)): 2V @ 36A
Drive Voltage: 4.5V (max Rds(on)), 10V (min Rds(on))
Gate Charge (Qg): 64nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Surface-mount package (PG-TSDSON-8)
Tape and reel packaging
Application Areas
Switch-mode power supplies
Motor drives
Voltage regulators
Industrial control systems
Automotive electronics
Product Lifecycle
Currently in production
No discontinuation or end-of-life plans announced
Key Reasons to Choose This Product
Excellent efficiency due to low on-resistance
High current handling capability
Compact surface-mount package for space-constrained designs
Wide operating temperature range
Suitable for a variety of high-reliability power electronics applications
