Manufacturer Part Number
BSZ036NE2LSATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET in compact PG-TSDSON-8-FL package
Product Features and Performance
Optimized for high-frequency and high-power density applications
Extremely low on-resistance of 3.6 mΩ @ 20 A, 10 V
Fast switching with low gate charge of 16 nC @ 10 V
Wide operating temperature range of -55°C to 150°C
Robust design with high avalanche energy capability
Product Advantages
Excellent efficiency and power density
Improved system reliability
Reduced power losses and heat generation
Key Technical Parameters
Drain to Source Voltage (Vdss): 25 V
Gate-Source Voltage (Vgs): ±20 V
Continuous Drain Current (Id): 16 A (Ta), 40 A (Tc)
Input Capacitance (Ciss): 1200 pF @ 12 V
Power Dissipation: 2.1 W (Ta), 37 W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Suitable for a wide range of high-frequency and high-power density applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial and automotive electronics
Product Lifecycle
Currently available
No information on discontinuation or replacements
Several Key Reasons to Choose This Product
Exceptional performance with ultra-low on-resistance and fast switching
Robust design with high avalanche energy capability
Compact and efficient package for high-density designs
Wide operating temperature range for diverse applications
Proven reliability and quality for industrial and automotive use
