Manufacturer Part Number
BSZ028N04LSATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor with low on-resistance and fast switching for efficient power conversion applications.
Product Features and Performance
Very low on-resistance of 2.8 mΩ @ 20 A, 10 V
High continuous drain current of 21 A (Ta) and 40 A (Tc)
Low input capacitance of 2300 pF @ 20 V
Fast switching with low gate charge of 32 nC @ 10 V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent efficiency and power density
Reliable and robust performance
Suitable for high-power, high-frequency applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 40 V
Gate-to-Source Voltage (Vgs) (Max): ±20 V
Power Dissipation (Max): 2.1 W (Ta), 63 W (Tc)
Package: 8-PowerTDFN (PG-TSDSON-8-FL)
Quality and Safety Features
RoHS3 compliant
Qualified for automotive and industrial applications
Compatibility
Compatible with a wide range of power conversion and motor control applications.
Application Areas
Switch-mode power supplies
Telecom and server power supplies
Industrial motor drives
Automotive electronics
Product Lifecycle
The BSZ028N04LSATMA1 is an active, in-production product. Replacement or upgrade options may be available from Infineon Technologies.
Key Reasons to Choose This Product
Exceptional efficiency and power density
Reliable and robust performance
Suitable for high-power, high-frequency applications
Wide operating temperature range
RoHS3 compliance for industrial and automotive applications
