Manufacturer Part Number
BSZ025N04LSATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor with low on-resistance and high power density
Product Features and Performance
Low on-resistance of 2.5 mOhm at 20A, 10V
High current capability of 22A (Ta) and 40A (Tc)
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 3680 pF at 20V
Maximum power dissipation of 2.1W (Ta) and 69W (Tc)
Product Advantages
Excellent energy efficiency and thermal management
High power density and compact size
Reliable and durable performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 40V
Gate-Source Voltage (Vgs) max: ±20V
Threshold Voltage (Vgs(th)) max: 2V at 250A
Drive Voltage (min Rds on, max Rds on): 4.5V, 10V
Gate Charge (Qg) max: 52 nC at 10V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with various electronic systems and circuits
Application Areas
Switching power supplies
Motor drives
Industrial and consumer electronics
Product Lifecycle
Current product offering
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
High current handling capability
Compact and reliable design
Suitable for a wide range of applications
