Manufacturer Part Number
BSZ019N03LSATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel power MOSFET for general-purpose applications
Product Features and Performance
Extremely low on-resistance for high efficiency
Fast switching for reduced switching losses
Robust and reliable design
Wide operating temperature range of -55°C to 150°C
Product Advantages
Efficient power management
High power density
Improved system reliability
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 1.9mΩ @ 20A, 10V
Continuous Drain Current (Id): 22A @ 25°C, 40A @ Tc
Input Capacitance (Ciss): 2800pF @ 15V
Power Dissipation: 2.1W @ Ta, 69W @ Tc
Quality and Safety Features
RoHS3 compliant
Robust and reliable design
Compatibility
Suitable for a wide range of general-purpose power applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Other high-power switching applications
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgrade options may be available, depending on specific application needs
Key Reasons to Choose This Product
Excellent power efficiency due to extremely low on-resistance
Fast switching for reduced switching losses
Wide operating temperature range for reliable performance
Robust and reliable design for improved system reliability
Suitable for a wide range of high-power switching applications