Manufacturer Part Number
BSZ024N04LS6ATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-Channel MOSFET transistor
Part of the OptiMOS 6 series
Product Features and Performance
40V Drain to Source Voltage (Vdss)
±20V Gate to Source Voltage (Vgs)
4mΩ Drain-Source On-Resistance (Rds(on)) at 20A, 10V
24A Continuous Drain Current (Id) at 25°C
40A Continuous Drain Current (Id) at 25°C (case temperature)
1800pF Input Capacitance (Ciss) at 20V
25nC Gate Charge (Qg) at 10V
Operating Temperature Range: -55°C to 175°C
Product Advantages
Excellent power efficiency due to low on-resistance
High-speed switching capability
Robust and reliable performance
Key Technical Parameters
MOSFET Technology: N-Channel
Vgs(th) (Max): 2.3V at 250A
Drive Voltage (Max Rds(on), Min Rds(on)): 4.5V, 10V
Power Dissipation (Max): 2.5W (ambient temperature), 75W (case temperature)
Quality and Safety Features
RoHS3 Compliant
Halogen-free and lead-free package
Compatibility
Suitable for use in a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Power amplifiers
Motor drives
Industrial automation and control
Product Lifecycle
Current product, no discontinuation planned
Replacements and upgrades available within the OptiMOS 6 series
Key Reasons to Choose This Product
Excellent power efficiency and switching performance
Robust and reliable operation across a wide temperature range
Halogen-free and lead-free construction for enhanced safety and environmental compliance
Compatibility with a broad range of power electronics applications
