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Home Products Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single~~BSV236SPH6327XTSA1~~

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BSV236SPH6327XTSA1 - Infineon Technologies

Manufacturer Part Number: BSV236SPH6327XTSA1

Manufacturer: Infineon Technologies

Allelco Part Number: 32D-BSV236SPH6327XTSA1

ECAD Model

Parts Description: MOSFET P-CH 20V 1.5A SOT363-6

Detailed Description

Package: 6-VSSOP, SC-88, SOT-363

Data sheet: ~~BSV236SPH6327XTSA1.pdf~~

RoHs Status: ROHS3 Compliant

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In stock: 287690

Specifications

BSV236SPH6327XTSA1 Tech Specifications
Infineon Technologies - BSV236SPH6327XTSA1 technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies - BSV236SPH6327XTSA1

Product Attribute	Attribute Value
Manufacturer	Infineon Technologies
Vgs(th) (Max) @ Id	1.2V @ 8µA
Vgs (Max)	±12V
Technology	MOSFET (Metal Oxide)
Supplier Device Package	PG-SOT363-PO
Series	OptiMOS™
Rds On (Max) @ Id, Vgs	175mOhm @ 1.5A, 4.5V
Power Dissipation (Max)	560mW (Ta)
Package / Case	6-VSSOP, SC-88, SOT-363
Package	Tape & Reel (TR)

Product Attribute	Attribute Value
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Input Capacitance (Ciss) (Max) @ Vds	228 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	5.7 nC @ 4.5 V
FET Type	P-Channel
FET Feature	-
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	1.5A (Ta)
Base Product Number	BSV236

Parts Introduction

Manufacturer Part Number

BSV236SPH6327XTSA1

Manufacturer

Infineon Technologies

Introduction

High-performance P-channel MOSFET transistor, part of the OptiMOS series.

Product Features and Performance

20V drain-source voltage

-55°C to 150°C operating temperature range

175mΩ maximum on-resistance at 1.5A, 4.5V

5A continuous drain current at 25°C

228pF maximum input capacitance at 15V

560mW maximum power dissipation

Product Advantages

Optimized performance for power conversion and control applications

Low on-resistance for high efficiency

Wide operating temperature range

Key Technical Parameters

P-channel MOSFET

20V drain-source voltage

±12V gate-source voltage

5A continuous drain current

175mΩ maximum on-resistance

Quality and Safety Features

RoHS3 compliant

PG-SOT363-PO packaging

Compatibility

Surface mount package

Compatible with a variety of power control and conversion applications

Application Areas

Power conversion

Motor control

Lighting control

General power management

Product Lifecycle

Currently in production

Replacement or upgrade options available from Infineon

Key Reasons to Choose This Product

Optimized performance for power applications

Low on-resistance for high efficiency

Wide operating temperature range

Reliable and RoHS compliant

Compatibility with various power control and conversion applications

Parts with Similar Specifications

The three parts on the right have similar specifications to Infineon Technologies BSV236SPH6327XTSA1

Product Attribute
Part Number	BSV236SPH6327XTSA1	BSV236SP L6327	IXTC13N50	FDD2612
Manufacturer	Infineon Technologies	Infineon Technologies	IXYS	onsemi
Input Capacitance (Ciss) (Max) @ Vds	228 pF @ 15 V	228 pF @ 15 V	2800 pF @ 25 V	234 pF @ 100 V
FET Feature	-	-	-	-
Mounting Type	Surface Mount	Surface Mount	Through Hole	Surface Mount
Base Product Number	BSV236	-	IXTC13	FDD261
Drain to Source Voltage (Vdss)	20 V	20 V	500 V	200 V
FET Type	P-Channel	P-Channel	N-Channel	N-Channel
Package	Tape & Reel (TR)	Tape & Reel (TR)	Tube	Tape & Reel (TR)
Package / Case	6-VSSOP, SC-88, SOT-363	6-VSSOP, SC-88, SOT-363	ISOPLUS220™	TO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id	1.2V @ 8µA	1.2V @ 8µA	4V @ 2.5mA	4.5V @ 250µA
Vgs (Max)	±12V	±12V	±20V	±20V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V	2.5V, 4.5V	10V	10V
Power Dissipation (Max)	560mW (Ta)	560mW (Ta)	140W (Tc)	42W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 175°C (TJ)
Supplier Device Package	PG-SOT363-PO	PG-SOT363-PO	ISOPLUS220™	TO-252AA
Rds On (Max) @ Id, Vgs	175mOhm @ 1.5A, 4.5V	175mOhm @ 1.5A, 4.5V	400mOhm @ 6.5A, 10V	720mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs	5.7 nC @ 4.5 V	5.7 nC @ 4.5 V	120 nC @ 10 V	11 nC @ 10 V
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	1.5A (Ta)	1.5A (Ta)	12A (Tc)	4.9A (Ta)
Series	OptiMOS™	OptiMOS™	-	PowerTrench®

BSV236SPH6327XTSA1 Datasheet PDF

Download BSV236SPH6327XTSA1 pdf datasheets and Infineon Technologies documentation for BSV236SPH6327XTSA1 - Infineon Technologies.

Other Related Documents: Part Number Guide.pdf
PCN Assembly/Origin: Mult Dev Site Chgs 2/Feb/2023.pdf
PCN Packaging: Reel Cover Tape Chg 16/Feb/2016.pdf

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