STF10N65K3 - STMicroelectronics

Manufacturer Part Number

STF10N65K3

Manufacturer

STMicroelectronics

Introduction

High-performance N-channel power MOSFET designed for high-voltage, high-current switching and amplification applications.

Product Features and Performance

Very low on-state resistance (RDS(on))

High voltage blocking capability (650V)

Low gate charge (Qg) for high switching speed

Rugged and reliable MOSFET design

Wide operating temperature range (-55°C to 150°C)

Product Advantages

Efficient power conversion and switching

Suitable for high-voltage, high-current applications

Fast switching speed for improved system performance

Excellent thermal management and reliability

Key Technical Parameters

Drain-Source Voltage (VDS): 650V

Gate-Source Voltage (VGS): ±30V

On-State Resistance (RDS(on)): 1Ω @ 3.6A, 10V

Continuous Drain Current (ID): 10A @ 25°C

Input Capacitance (Ciss): 1180pF @ 25V

Power Dissipation (Pd): 35W @ 25°C

Quality and Safety Features

RoHS3 compliant

Rugged and reliable TO-220 package

Compatibility

Suitable for high-voltage, high-current switching and amplification applications in power supplies, motor drives, and other industrial and consumer electronics.

Application Areas

Switch-mode power supplies

Motor drives

Industrial and consumer electronics

High-voltage, high-current switching applications

Product Lifecycle

The STF10N65K3 is an active and widely available product. Replacements and upgrades may be available, but the product is not nearing discontinuation.

Key Reasons to Choose This Product

Excellent performance-to-cost ratio

Reliable and robust design for high-voltage, high-current applications

Fast switching speed and low on-state resistance for efficient power conversion

Wide operating temperature range for versatile usage

RoHS3 compliance for environmentally friendly applications