Manufacturer Part Number
STF10LN80K5
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance N-channel MOSFET in TO-220 package
Product Features and Performance
High breakdown voltage up to 800V
Low on-resistance for low conduction losses
Fast switching for high-frequency applications
Reliable and robust design
Suitable for high-power, high-voltage applications
Product Advantages
Optimized for high-voltage and high-power applications
Excellent thermal management with TO-220 package
Improved efficiency and system performance
Reliable and long-lasting operation
Key Technical Parameters
Drain to Source Voltage (Vdss): 800V
Maximum Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 630mΩ @ 4A, 10V
Continuous Drain Current (Id): 8A @ 25°C
Input Capacitance (Ciss): 427pF @ 100V
Power Dissipation (Tc): 25W
Quality and Safety Features
RoHS3 compliant
Reliable and robust design for safety-critical applications
Suitable for operation in harsh environments
Compatibility
Suitable for a wide range of high-voltage, high-power applications
Easily integrated into various power electronics systems
Application Areas
Switched-mode power supplies (SMPS)
Motor drives
Power inverters
Induction heating
Welding equipment
Industrial and medical equipment
Product Lifecycle
Currently in active production
No plans for discontinuation
Replacement or upgrade options available if required
Key Reasons to Choose This Product
High breakdown voltage and low on-resistance for high-efficiency power conversion
Fast switching capability for high-frequency applications
Reliable and robust design for use in harsh environments
Excellent thermal management with TO-220 package
Versatile compatibility and wide range of applications
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