Manufacturer Part Number
STF100N6F7
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel MOSFET transistor designed for power management and switching applications.
Product Features and Performance
High current capability up to 46A continuous drain current
Low on-resistance of 5.6mΩ
Wide operating temperature range of -55°C to 175°C
High drain-source breakdown voltage of 60V
Fast switching with low gate charge of 30nC
High input capacitance of 1980pF
Product Advantages
Efficient power conversion and management
Reliable operation under high temperature conditions
Compact and space-saving design
Suitable for a wide range of power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 60V
Gate to Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 5.6mΩ
Continuous Drain Current (Id): 46A
Input Capacitance (Ciss): 1980pF
Power Dissipation (Tc): 25W
Quality and Safety Features
Compliant with RoHS3 directive
Robust TO-220FP package construction
Designed and manufactured to high quality standards
Compatibility
Compatible with a wide range of power supply and control circuits
Suitable for use in various power electronics applications
Application Areas
Power supplies
Motor drives
Switching power converters
Inverters
Lighting and industrial controls
Product Lifecycle
Current production model, no discontinuation planned
Replacements and upgrades may become available in the future as technology advances
Key Reasons to Choose
High current handling capability
Efficient power conversion with low on-resistance
Wide operating temperature range for reliable performance
Fast switching for improved system efficiency
Compact and space-saving design
Compliant with RoHS3 directive for environmental responsibility
STF10N60STMicroelectronics
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