BSV52LT1G - onsemi

Manufacturer Part Number

BSV52LT1G

Manufacturer

onsemi

Introduction

The BSV52LT1G is a high-frequency NPN bipolar junction transistor (BJT) designed for use in a variety of electronic circuits.

Product Features and Performance

Capable of operating at frequencies up to 400 MHz

Collector-emitter breakdown voltage of 12 V

Collector current up to 100 mA

Power dissipation of 225 mW

Wide operating temperature range of -55°C to 150°C

Product Advantages

Suitable for high-frequency applications

Excellent power and current handling capabilities

Compact surface-mount package for efficient board layout

Key Technical Parameters

Collector-emitter breakdown voltage: 12 V

Collector current (max): 100 mA

Power dissipation: 225 mW

Transition frequency: 400 MHz

DC current gain (hFE): 40 (min) @ 10 mA, 1 V

Quality and Safety Features

RoHS3 compliant

Reliable performance in a wide temperature range

Compatibility

Suitable for use in various electronic circuits and applications

Application Areas

Radio frequency (RF) circuits

Amplifiers

Switches

Oscillators

Drivers

Product Lifecycle

This product is currently in production and available for purchase.

Replacements or upgrades may be available in the future as technology advances.

Key Reasons to Choose This Product

High-frequency performance up to 400 MHz

Robust power and current handling capabilities

Compact surface-mount package for efficient board layout

Reliable operation over a wide temperature range

RoHS3 compliance for environmentally-friendly use