Manufacturer Part Number
MMBT4401M3T5G
Manufacturer
onsemi
Introduction
The MMBT4401M3T5G is a high-performance, small-signal NPN bipolar junction transistor (BJT) from onsemi. It is designed for use in a wide range of electronic circuits and applications.
Product Features and Performance
High-frequency operation up to 250 MHz
Low collector-emitter saturation voltage (Vce(sat)) of 750 mV at 50 mA, 500 mA
High DC current gain (hFE) of at least 100 at 150 mA, 1 V
Capable of handling up to 600 mA of collector current
Operates over a wide temperature range of -55°C to 150°C
Product Advantages
Excellent high-frequency performance
Low power consumption
Robust and reliable operation
Suitable for a variety of electronic circuits and applications
Key Technical Parameters
Manufacturer Part Number: MMBT4401M3T5G
Transistor Type: NPN
Collector-Emitter Breakdown Voltage (BV_CEO): 40 V
Collector Current (IC_MAX): 600 mA
Power Dissipation (P_MAX): 265 mW
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Manufactured in a high-quality, ISO-certified facility
Compatibility
Compatible with a wide range of electronic circuits and applications
Application Areas
Amplifiers
Switches
Logic gates
Oscillators
Voltage regulators
General-purpose electronic circuits
Product Lifecycle
The MMBT4401M3T5G is an actively supported product and is not nearing discontinuation.
Replacement or upgrade options may be available, depending on the specific application requirements.
Several Key Reasons to Choose This Product
Excellent high-frequency performance for high-speed electronic circuits
Low power consumption and efficient operation
Robust and reliable operation over a wide temperature range
Versatile compatibility with a variety of electronic circuits and applications
High-quality, RoHS-compliant manufacturing for environmental and safety compliance