MMBT4401LT3G - onsemi

Manufacturer Part Number

MMBT4401LT3G

Manufacturer

onsemi

Introduction

General-purpose NPN bipolar junction transistor (BJT)

Designed for use in switching and amplifier applications

Product Features and Performance

High gain-bandwidth product (fT) of 250 MHz

Low collector-emitter saturation voltage (VCE(sat))

Wide operating temperature range of -55°C to 150°C

Compact surface-mount SOT-23-3 package

Product Advantages

Efficient switching performance

Reliable operation in diverse environments

Space-saving package design

Key Technical Parameters

Power Rating: 300 mW

Collector-Emitter Breakdown Voltage: 40 V

Collector Current (Max): 600 mA

Current Gain (hFE): Minimum of 100 @ 150 mA, 1 V

Quality and Safety Features

RoHS3 compliant

Manufactured in ISO-certified facilities

Compatibility

Suitable for use in a variety of electronic circuits and applications

Application Areas

Switching and amplifying circuits

General-purpose electronics

Industrial and consumer electronics

Product Lifecycle

Active and available for purchase

No known plans for discontinuation

Key Reasons to Choose This Product

Reliable and efficient performance

Wide operating temperature range

Compact and space-saving package

Cost-effective solution for many applications