MMBT4401LT1G - onsemi

Manufacturer Part Number

MMBT4401LT1G

Manufacturer

onsemi

Introduction

Discrete Semiconductor Product

Transistors Bipolar (BJT) Single

Product Features and Performance

RoHS3 Compliant

SOT-23-3 (TO-236) package

Operating Temperature: -55°C ~ 150°C (TJ)

Power Rating: 300 mW

Collector-Emitter Breakdown Voltage: 40 V

Collector Current: 600 mA

Collector-Emitter Saturation Voltage: 750 mV @ 50 mA, 500 mA

Transistor Type: NPN

DC Current Gain (hFE): 100 @ 150 mA, 1 V

Transition Frequency: 250 MHz

Surface Mount Mounting

Product Advantages

Compact SOT-23-3 package

Wide operating temperature range

High power rating

High breakdown voltage

High collector current capability

Low saturation voltage

High DC current gain

High transition frequency

Key Technical Parameters

Power Rating: 300 mW

Collector-Emitter Breakdown Voltage: 40 V

Collector Current: 600 mA

DC Current Gain (hFE): 100 @ 150 mA, 1 V

Transition Frequency: 250 MHz

Quality and Safety Features

RoHS3 Compliant

Compatibility

Compatible with various electronic circuits and applications requiring a high-performance NPN bipolar junction transistor

Application Areas

Amplifiers

Switches

Drivers

Logic gates

General-purpose electronics

Product Lifecycle

This product is currently available and actively supported by the manufacturer. No information on discontinuation or replacement has been provided.

Key Reasons to Choose This Product

Compact SOT-23-3 package for space-constrained designs

Wide operating temperature range for reliable operation in diverse environments

High power rating and breakdown voltage for demanding applications

High collector current and low saturation voltage for efficient power handling

High DC current gain and transition frequency for high-speed performance

RoHS3 compliance for use in environmentally-conscious applications