Manufacturer Part Number
MMBT4401WT1G
Manufacturer
onsemi
Introduction
High-performance NPN bipolar junction transistor
Designed for general-purpose amplifier and switching applications
Product Features and Performance
Wide Collector-Emitter Breakdown Voltage: 40V
High Collector Current: 600mA
High Transition Frequency: 250MHz
Low Collector-Emitter Saturation Voltage: 750mV @ 50mA, 500mA
Product Advantages
Excellent high-frequency performance
Reliable and stable operation
Compact surface mount package
Key Technical Parameters
Power Max: 150mW
Operating Temperature: -55°C to 150°C
DC Current Gain (hFE): Min. 100 @ 150mA, 1V
Packaging: SC-70-3 (SOT323), Tape & Reel
Quality and Safety Features
RoHS3 compliant
Meets stringent quality and reliability standards
Compatibility
Suitable for a wide range of general-purpose amplifier and switching applications
Application Areas
Audio amplifiers
Power supplies
Switching circuits
General-purpose electronics
Product Lifecycle
Current production part, no discontinuation or obsolescence expected in the near future
Replacement parts and upgrades readily available
Key Reasons to Choose
Excellent high-frequency performance for demanding applications
Reliable and stable operation across a wide temperature range
Compact and space-efficient surface mount package
Meets RoHS3 compliance for environmentally-friendly design
Widely available and supported by the manufacturer