Manufacturer Part Number
BSO200N03S
Manufacturer
Infineon Technologies
Introduction
This product is a discrete N-Channel MOSFET transistor from Infineon Technologies.
Product Features and Performance
Drain to Source Voltage (Vdss) of 30V
Vgs (Max) of ±20V
On-state Resistance (Rds On) of 20mOhm @ 8.8A, 10V
Continuous Drain Current (Id) of 7A @ 25°C
Input Capacitance (Ciss) of 840pF @ 15V
Power Dissipation (Max) of 1.56W
Operating Temperature Range of -55°C to 150°C
Product Advantages
Low on-state resistance for high efficiency
High current capability
Wide operating temperature range
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
Threshold Voltage (Vgs(th)) of 2V @ 10A
Gate Charge (Qg) of 6.5nC @ 5V
Quality and Safety Features
Qualified to industrial standards
Robust package design for reliable operation
Compatibility
Suitable for a wide range of power electronics and switching applications.
Application Areas
Power supplies
Motor drives
Industrial automation
Consumer electronics
Product Lifecycle
This product is currently in production and available. No discontinuation or replacement is planned.
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Proven reliability and quality
Compatibility with a wide range of applications
Availability in standard surface-mount packaging
BSO200N3SINFIEON