Manufacturer Part Number
BSO200N03
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET transistor
Suitable for various power management and switching applications
Product Features and Performance
Dual N-channel MOSFET configuration
Low on-resistance (Rds(on)) of 20 mΩ
High continuous drain current (Id) of 6.6 A
Wide operating temperature range of -55°C to 150°C
Optimized performance and efficiency
Product Advantages
Excellent power handling and thermal management
Reliable and robust design for demanding applications
Suitable for high-frequency switching and power conversion
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30 V
Input Capacitance (Ciss): 1010 pF
Gate Threshold Voltage (Vgs(th)): 2 V
Gate Charge (Qg): 8 nC
Quality and Safety Features
Compliant with industry standards and regulations
Robust construction for reliable operation
ESD protection for enhanced safety
Compatibility
Suitable for a wide range of power electronic circuits and systems
Application Areas
Power supplies
Motor drives
Power conversion and management
Industrial and consumer electronics
Product Lifecycle
Current product in active production
Replacement or upgraded models may be available in the future
Several Key Reasons to Choose This Product
Excellent power efficiency and performance
Reliable and robust design for demanding applications
Optimized for high-frequency switching and power conversion
Wide operating temperature range and compatibility
BSO200N3Cypress Semiconductor (Infineon Technologies)