Manufacturer Part Number
BSO150N03MDGXUMA1
Manufacturer
Infineon Technologies
Introduction
High-performance dual n-channel MOSFET in a compact SOIC-8 package
Designed for efficient power conversion and control applications
Product Features and Performance
30V drain-source voltage
15mΩ maximum on-resistance at 9.3A and 10V gate-source voltage
8A continuous drain current at 25°C
1300pF maximum input capacitance at 15V drain-source voltage
Logic-level gate, with 2V maximum threshold voltage at 250µA drain current
17nC maximum gate charge at 10V gate-source voltage
Wide operating temperature range of -55°C to 150°C
Product Advantages
Optimized for high-efficiency power conversion
Compact SOIC-8 package for space-constrained designs
Logic-level gate for easy drive circuit implementation
Robust performance over wide temperature range
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
On-Resistance (RdsOn): 15mΩ
Continuous Drain Current (Id): 8A
Input Capacitance (Ciss): 1300pF
Gate Threshold Voltage (Vgs(th)): 2V
Gate Charge (Qg): 17nC
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
Current production, no plans for discontinuation
Replacement or upgrade options available if required
Key Reasons to Choose This Product
Excellent efficiency and performance for power conversion and control
Compact SOIC-8 package for space-constrained designs
Logic-level gate for easy implementation in drive circuits
Robust operation over wide temperature range
Automotive-grade quality and safety features
BSO110N03MSGCypress Semiconductor (Infineon Technologies)