Manufacturer Part Number
BSO203SP
Manufacturer
Infineon Technologies
Introduction
The BSO203SP is a P-channel MOSFET device from Infineon Technologies' OptiMOS series.
Product Features and Performance
Drain to Source Voltage (Vdss) of 20 V
Gate-Source Voltage (Vgs) range of ±12 V
Low On-Resistance (Rds(on)) of 21 mΩ at 8.9 A and 4.5 V
Continuous Drain Current (Id) of 7 A at 25°C
Input Capacitance (Ciss) of 3750 pF at 15 V
Power Dissipation (Max) of 1.6 W at 25°C
Operating Temperature range of -55°C to 150°C
Product Advantages
Low on-resistance for improved energy efficiency
High current handling capability
Wide operating temperature range
Key Technical Parameters
MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) technology
P-Channel FET type
Threshold Voltage (Vgs(th)) of 1.2 V at 50 A
Drive Voltage range of 2.5 V to 4.5 V
Gate Charge (Qg) of 39 nC at 4.5 V
Quality and Safety Features
RoHS non-compliant
8-SOIC (0.154", 3.90mm Width) package
Compatibility
Suitable for surface mount applications
Application Areas
Suitable for various power management and control applications
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgraded products may be available in the future
Key Reasons to Choose This Product
Excellent performance characteristics, including low on-resistance and high current handling
Wide operating temperature range for diverse applications
Compact surface mount package for efficient use of board space
Proven reliability and quality from Infineon Technologies
