Manufacturer Part Number
BSC022N03SG
Manufacturer
Infineon Technologies
Introduction
This is a high-performance N-Channel MOSFET transistor from Infineon Technologies' OptiMOS series.
Product Features and Performance
30V Drain-Source Voltage (Vdss)
±20V Gate-Source Voltage (Vgs)
2mΩ Maximum On-Resistance (Rds(on)) at 50A, 10V
28A Continuous Drain Current (Id) at 25°C (Ta), 100A at 25°C (Tc)
8290pF Maximum Input Capacitance (Ciss) at 15V
8W Power Dissipation at 25°C (Ta), 104W at 25°C (Tc)
-55°C to 150°C Operating Temperature Range
Product Advantages
Low on-resistance for efficient power conversion
High current handling capability
Compact PowerTDFN package for high-density designs
Wide operating temperature range
Key Technical Parameters
MOSFET Technology
N-Channel FET Type
2V Maximum Gate Threshold Voltage (Vgs(th)) at 110A
5V to 10V Drive Voltage Range
64nC Maximum Gate Charge (Qg) at 5V
Quality and Safety Features
Compliant with RoHS and REACH regulations
Automotive-grade quality and reliability
Compatibility
Compatible with a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial and automotive electronics
Frequency converters
Product Lifecycle
This product is currently in active production and availability is good. No immediate plans for discontinuation have been announced.
Key Reasons to Choose this Product
Excellent power efficiency and thermal performance
Compact and space-saving package
Wide operating temperature range for diverse applications
Proven quality and reliability from a leading semiconductor manufacturer
