Manufacturer Part Number
BSC024NE2LSATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-channel MOSFET with low on-resistance and compact package
Product Features and Performance
Very low on-resistance (2.4 mΩ @ 30 A, 10 V)
High current capability (25 A continuous, 110 A pulsed)
Low gate charge (23 nC @ 10 V)
Wide operating temperature range (-55°C to 150°C)
Compact 8-PowerTDFN package
Product Advantages
Efficient power conversion
Improved thermal management
Reduced system size and weight
Key Technical Parameters
Drain-Source Voltage (Vdss): 25 V
Gate-Source Voltage (Vgs): ±20 V
Continuous Drain Current (Id): 25 A (Ta), 110 A (Tc)
On-Resistance (Rds(on)): 2.4 mΩ @ 30 A, 10 V
Input Capacitance (Ciss): 1700 pF @ 12 V
Power Dissipation (Max): 2.5 W (Ta), 48 W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Designed for use in a wide range of power conversion and switching applications
Application Areas
Switch-mode power supplies
Motor drives
Electric vehicle powertrains
Industrial automation and control
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacements and upgrades may be available in the future as technology evolves.
Several Key Reasons to Choose This Product
Excellent efficiency and power density due to low on-resistance and compact package
High current capability and wide operating temperature range
Suitable for demanding power conversion and switching applications
Reliable and RoHS-compliant design
