Manufacturer Part Number
BSC025N03LSGATMA1
Manufacturer
Infineon Technologies
Introduction
The BSC025N03LSGATMA1 is a high-performance N-channel MOSFET transistor from Infineon Technologies, designed for a wide range of power management and switching applications.
Product Features and Performance
30V drain-to-source voltage (Vdss)
5mΩ maximum on-resistance (Rds(on)) at 30A, 10V
25A continuous drain current (Id) at 25°C
100A continuous drain current (Id) at 105°C
6100pF maximum input capacitance (Ciss) at 15V
Operating temperature range of -55°C to 150°C
Product Advantages
Extremely low on-resistance for high efficiency
High current handling capability
High-speed switching performance
Compact and thermally efficient package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30V
Gate-to-Source Voltage (Vgs): ±20V
Continuous Drain Current (Id): 25A (Ta), 100A (Tc)
On-Resistance (Rds(on)): 2.5mΩ @ 30A, 10V
Input Capacitance (Ciss): 6100pF @ 15V
Quality and Safety Features
RoHS3 compliant
Qualified to automotive and industrial standards
Compatibility
Suitable for a wide range of power management and switching applications
Application Areas
Power supplies
Motor drives
Inverters
DC/DC converters
Industrial automation
Electric vehicles
Product Lifecycle
Current product
No indication of discontinuation
Replacement or upgrade options available
Key Reasons to Choose This Product
Exceptional power efficiency due to low on-resistance
High current handling capability for demanding applications
Compact and thermally efficient package for space-constrained designs
Proven reliability and performance for automotive and industrial use cases
