Manufacturer Part Number
BSC021N08NS5ATMA1
Manufacturer
Infineon Technologies
Introduction
High-performance N-Channel MOSFET transistor
Part of the OptiMOS and StrongIRFET series
Product Features and Performance
80V drain-to-source voltage
100A continuous drain current at 25°C
1mΩ maximum on-resistance at 50A, 10V
-55°C to 175°C operating temperature range
Low gate charge of 29nC at 10V
Low input capacitance of 8600pF at 40V
Product Advantages
Excellent power efficiency and low power losses
Robust and reliable performance
Suitable for high-current, high-density applications
Key Technical Parameters
MOSFET technology
N-Channel FET type
80V drain-to-source voltage
100A continuous drain current
1mΩ maximum on-resistance
-55°C to 175°C operating temperature
Quality and Safety Features
RoHS3 compliant
Surface mount package (PG-TSON-8-3)
Compatibility
Compatible with various high-power, high-efficiency applications
Application Areas
Motor drives
Power supplies
Inverters
Industrial and automotive electronics
Product Lifecycle
Active product
Replacements and upgrades may be available
Key Reasons to Choose This Product
Excellent power efficiency and low power losses
Robust and reliable performance
Wide operating temperature range
Suitable for high-current, high-density applications
RoHS3 compliance for environmental sustainability
