Manufacturer Part Number
BSC022N03S
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
N-Channel MOSFET
30V Drain-Source Voltage
±20V Gate-Source Voltage
2mOhm On-Resistance @ 50A, 10V
28A Continuous Drain Current @ 25°C (Ta)
100A Continuous Drain Current @ 25°C (Tc)
7490pF Input Capacitance @ 15V
8W Power Dissipation @ 25°C (Ta)
104W Power Dissipation @ 25°C (Tc)
-55°C to 150°C Operating Temperature Range
Product Advantages
High current capability
Low on-resistance
High power dissipation
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
Gate-Source Voltage (Vgs): ±20V
Drain-Source On-Resistance (Rds(on)): 2.2mOhm
Continuous Drain Current (Id): 28A (Ta), 100A (Tc)
Input Capacitance (Ciss): 7490pF
Power Dissipation: 2.8W (Ta), 104W (Tc)
Gate Charge (Qg): 58nC
Quality and Safety Features
RoHS non-compliant
Compatibility
8-PowerTDFN package
Compatible with PG-TDSON-8-1 package
Application Areas
Suitable for high-current, high-power applications
Product Lifecycle
Current product, no information on discontinuation or replacements
Several Key Reasons to Choose This Product
High current capability up to 100A
Low on-resistance of 2.2mOhm
High power dissipation up to 104W
Wide operating temperature range of -55°C to 150°C
Suitable for high-current, high-power applications
