Manufacturer Part Number
BFR181WH6327XTSA1
Manufacturer
Infineon Technologies
Introduction
High-frequency bipolar transistor for RF applications
Product Features and Performance
Excellent high-frequency performance
Low noise figure
High transit frequency
High current gain
Compact surface mount package
Product Advantages
Suitable for a wide range of RF applications
High reliability and stability
Good thermal management
Key Technical Parameters
Operating temperature: -55°C to 150°C
Power rating: 175mW
Collector-emitter breakdown voltage: 12V
Collector current: 20mA
Current gain (hFE): 70 @ 5mA, 8V
Transition frequency: 8GHz
Gain: 19dB
Noise figure: 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Quality and Safety Features
RoHS3 compliant
Reliable and robust design
Compatibility
Suitable for surface mount applications
Application Areas
RF amplifiers
Mixers
Oscillators
Switches
Tuners
Product Lifecycle
This product is currently active and available for purchase.
Replacement or upgrade options may be available, depending on future product development.
Key Reasons to Choose This Product
Excellent high-frequency performance for RF applications
Low noise figure for improved signal quality
Compact surface mount package for space-constrained designs
High reliability and stability for long-term use
Suitable for a wide range of RF circuit designs