Manufacturer Part Number
BFR182E6327
Manufacturer
Infineon Technologies
Introduction
High-frequency small-signal NPN bipolar transistor
Suitable for radio frequency (RF) and microwave applications
Product Features and Performance
Operates at high frequencies up to 8 GHz
Provides high gain of 12 dB to 18 dB
Exhibits low noise figure of 0.9 dB to 1.3 dB at 900 MHz to 1.8 GHz
Supports a maximum collector current of 35 mA
Capable of handling a maximum power of 250 mW
Operates within a wide temperature range up to 150°C
Product Advantages
Excellent high-frequency performance
Low noise characteristics
High gain and power handling capability
Compact surface mount package
Key Technical Parameters
Collector-Emitter Breakdown Voltage (Max): 12 V
DC Current Gain (hFE) (Min): 70 @ 10 mA, 8 V
Transition Frequency: 8 GHz
Noise Figure: 0.9 dB to 1.3 dB @ 900 MHz to 1.8 GHz
Quality and Safety Features
Complies with RoHS (Restriction of Hazardous Substances) directive
Manufactured in a quality-controlled environment
Compatibility
Compatible with various RF and microwave circuit designs
Application Areas
Suitable for use in radio frequency (RF) and microwave applications
Suitable for use in wireless communication systems, radar, and test equipment
Product Lifecycle
This product is currently in active production and available for purchase
Replacement or upgrade options may be available from Infineon Technologies
Key Reasons to Choose This Product
Excellent high-frequency performance for demanding RF and microwave applications
Low noise characteristics for improved signal-to-noise ratio
High gain and power handling capability for efficient circuit design
Compact surface mount package for space-constrained designs
Reliable performance within a wide temperature range
