Manufacturer Part Number
BFR181WE6327
Manufacturer
Infineon Technologies
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT) - RF
Product Features and Performance
RoHS3 Compliant
SOT-323 package
Operating Temperature: 150°C (TJ)
Power: 175mW
Collector-Emitter Breakdown Voltage: 12V
Collector Current: 20mA
NPN Transistor Type
DC Current Gain: 70 @ 5mA, 8V
Transition Frequency: 8GHz
Gain: 19dB
Noise Figure: 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Surface Mount Mounting
Product Advantages
High-performance RF transistor
Compact SOT-323 package
Wide operating temperature range
Low noise figure for improved receiver sensitivity
Key Technical Parameters
Power Rating: 175mW
Collector-Emitter Breakdown Voltage: 12V
Collector Current: 20mA
DC Current Gain: 70
Transition Frequency: 8GHz
Gain: 19dB
Noise Figure: 0.9dB ~ 1.2dB
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount Technology (SMT) compatible
Application Areas
RF amplifiers
Wireless communication systems
Radio frequency (RF) circuits
Product Lifecycle
Currently available
No information on discontinuation or replacement
Key Reasons to Choose This Product
High-frequency performance for RF applications
Compact SOT-323 package
Wide operating temperature range
Low noise figure for improved receiver sensitivity
RoHS3 compliance for environmental friendliness