BFR181E6327 - Infineon Technologies

Manufacturer Part Number

BFR181E6327

Manufacturer

Infineon Technologies

Introduction

The BFR181E6327 is a high-performance NPN bipolar junction transistor (BJT) designed for radio frequency (RF) applications.

Product Features and Performance

Supports operating temperatures up to 150°C

Maximum power dissipation of 175mW

Collector-emitter breakdown voltage up to 12V

Collector current up to 20mA

Transition frequency of 8GHz

Gain of 18.5dB

Noise figure of 0.9dB to 1.2dB in the 900MHz to 1.8GHz frequency range

Product Advantages

Suitable for high-frequency, high-power RF applications

Excellent noise performance

Reliable operation at high temperatures

Key Technical Parameters

Transistor Type: NPN

DC Current Gain (hFE): 70 (min) @ 5mA, 8V

Frequency Transition: 8GHz

Gain: 18.5dB

Noise Figure: 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz

Quality and Safety Features

RoHS compliance status not applicable

Compatibility

Package: TO-236-3, SC-59, SOT-23-3

Mounting Type: Surface Mount

Application Areas

RF amplifiers

Wireless communications

Radar systems

Industrial and consumer electronics

Product Lifecycle

The BFR181E6327 is an active product and is not nearing discontinuation.

Replacement or upgrade options may be available from Infineon Technologies.

Key Reasons to Choose This Product

High-frequency and high-power performance

Excellent noise figure for improved signal quality

Reliable operation at elevated temperatures

Compatibility with surface mount technology

Availability of replacement or upgrade options from the manufacturer