BCW68HE6327HTSA1 - Infineon Technologies

Manufacturer Part Number

BCW68HE6327HTSA1

Manufacturer

Infineon Technologies

Introduction

Bipolar Junction Transistor (BJT) in a PG-SOT23 package

Product Features and Performance

High frequency performance up to 200MHz

Low collector-emitter saturation voltage

Suitable for high-speed switching applications

Compact and space-saving PG-SOT23 package

Product Advantages

Excellent high-frequency performance

Low power consumption

Compact and space-saving package

Reliable and robust design

Key Technical Parameters

Operating Temperature: 150°C (TJ)

Power Rating: 330 mW

Collector-Emitter Breakdown Voltage: 45 V

Collector Current (Max): 800 mA

Collector Cutoff Current: 20 nA

DC Current Gain: 250 @ 100 mA, 1 V

Quality and Safety Features

RoHS3 compliant

Reliable and durable construction

Compatibility

Surface mount design

Suitable for high-speed switching applications

Application Areas

High-speed switching circuits

Power management circuits

Amplifier circuits

Industrial and consumer electronics

Product Lifecycle

This product is currently in active production and is not nearing discontinuation.

Replacement or upgrade options are available from Infineon Technologies.

Key Reasons to Choose This Product

Excellent high-frequency performance up to 200 MHz

Low power consumption and compact package

Reliable and robust design for industrial and consumer applications

RoHS3 compliance for environmental responsibility

Availability of replacement and upgrade options from the manufacturer