BCW70LT1 - onsemi

Manufacturer Part Number

BCW70LT1

Manufacturer

onsemi

Introduction

The BCW70LT1 is a discrete PNP bipolar junction transistor (BJT) in a small SOT-23-3 (TO-236) surface mount package.

Product Features and Performance

PNP bipolar junction transistor

Small SOT-23-3 (TO-236) surface mount package

Wide operating temperature range: -55°C to 150°C

Power rating: 225 mW

Collector-Emitter Breakdown Voltage (VCEO): 45 V

Collector Current (IC): 100 mA

Collector Cutoff Current (ICBO): 100 nA

Collector-Emitter Saturation Voltage (VCE(sat)): 300 mV @ 10 mA, 500 μA

DC Current Gain (hFE): Minimum 215 @ 2 mA, 5 V

Product Advantages

Small and compact surface mount package

Wide operating temperature range

High voltage and current handling capabilities

Low collector-emitter saturation voltage

Key Technical Parameters

Manufacturer Part Number: BCW70LT1

Package: SOT-23-3 (TO-236)

RoHS: Non-compliant

Operating Temperature Range: -55°C to 150°C

Power Rating: 225 mW

Collector-Emitter Breakdown Voltage (VCEO): 45 V

Collector Current (IC): 100 mA

Collector Cutoff Current (ICBO): 100 nA

Collector-Emitter Saturation Voltage (VCE(sat)): 300 mV @ 10 mA, 500 μA

DC Current Gain (hFE): Minimum 215 @ 2 mA, 5 V

Quality and Safety Features

RoHS non-compliant

Compatibility

The BCW70LT1 is a discrete PNP bipolar junction transistor that can be used in a variety of electronic circuits and applications.

Application Areas

Amplifier circuits

Switching circuits

Power supplies

Instrumentation

General-purpose electronics

Product Lifecycle

The BCW70LT1 is an active product and is currently available for purchase. There are no indications of it being near discontinuation. Replacement or upgrade options may be available, but specific information is not provided.

Several Key Reasons to Choose This Product

Small and compact surface mount package for efficient space utilization in electronic designs.

Wide operating temperature range, allowing for use in diverse environmental conditions.

High voltage and current handling capabilities, enabling the device to be used in a variety of power-related applications.

Low collector-emitter saturation voltage, contributing to improved efficiency and performance in switching and amplifier circuits.

Minimum DC current gain (hFE) of 215, providing reliable and consistent transistor behavior in the intended application.