Manufacturer Part Number
BCW70LT1G
Manufacturer
onsemi
Introduction
The BCW70LT1G is a PNP bipolar junction transistor (BJT) in a SOT-23-3 (TO-236) surface mount package.
Product Features and Performance
Operating temperature range: -55°C to 150°C
Maximum power dissipation: 225 mW
Maximum collector-emitter breakdown voltage: 45 V
Maximum collector current: 100 mA
Maximum collector cutoff current: 100 nA
Maximum collector-emitter saturation voltage: 300 mV
Minimum DC current gain (hFE): 215
Product Advantages
Small, surface-mount package
Wide operating temperature range
High breakdown voltage
Low saturation voltage
High current handling capability
Key Technical Parameters
Transistor type: PNP
Package: SOT-23-3 (TO-236)
Mounting type: Surface mount
Quality and Safety Features
RoHS3 compliant
Compatibility
Can be used in a wide range of electronic circuits and applications
Application Areas
Suitable for use in amplifiers, switches, and other electronic circuits
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgraded models may become available in the future
Key Reasons to Choose This Product
Reliable and proven performance
Compact surface-mount package
Wide operating temperature range
High voltage and current handling capabilities
Low saturation voltage for efficient operation