Manufacturer Part Number
BCW68GLT1G
Manufacturer
onsemi
Introduction
The BCW68GLT1G is a high-performance PNP bipolar junction transistor (BJT) from onsemi, designed for a wide range of electronic applications.
Product Features and Performance
High DC current gain (hFE) of 120 or more at 10mA collector current and 1V collector-emitter voltage
High frequency transition (fT) of 100MHz
Low collector-emitter saturation voltage (VCE(sat)) of 1.5V at 30mA and 300mA collector current
Low collector cutoff current (ICBO) of 20nA
Operates over a wide temperature range of -55°C to 150°C
Product Advantages
High-reliability and robust performance
Suitable for use in various electronic circuits and systems
Compact and space-saving SOT-23-3 (TO-236) surface mount package
Key Technical Parameters
Collector-Emitter Breakdown Voltage (BVCEO): 45V
Collector Current (IC(max)): 800mA
Power Dissipation (Pd): 225mW
Quality and Safety Features
RoHS3 compliant
Manufactured in an ISO-certified facility
Compatibility
The BCW68GLT1G is a direct replacement for a wide range of PNP bipolar transistors in electronic circuits and systems.
Application Areas
Analog and digital circuits
Switching and amplification applications
Power supplies and regulators
Telecommunications equipment
Industrial and consumer electronics
Product Lifecycle
The BCW68GLT1G is an active and widely available product, with no plans for discontinuation in the near future. Replacement and upgrade options are readily available from onsemi and other reputable manufacturers.
Key Reasons to Choose This Product
Excellent electrical performance characteristics, including high current gain, high-frequency response, and low saturation voltage
Robust and reliable operation over a wide temperature range
Compact and space-saving surface mount package
Broad compatibility and easy integration into a variety of electronic circuits and systems
RoHS3 compliance for environmentally-friendly applications
Backed by onsemi's reputation for quality and reliability in the semiconductor industry