Manufacturer Part Number
NE3509M04-T2-A
Manufacturer
CEL (California Eastern Laboratories)
Introduction
High performance GaAs HJ-FET transistor for RF applications
Product Features and Performance
Excellent gain and noise figure at 2GHz
High output power of 11dBm
Low noise figure of 0.4dB
Operates at 4V and 60mA
Product Advantages
Superior RF performance
Compact SOT-343F package
Reliable GaAs HJ-FET technology
Key Technical Parameters
Frequency: 2GHz
Gain: 17.5dB
Noise Figure: 0.4dB
Power Output: 11dBm
Current Rating: 60mA
Voltage Rating: 4V
Quality and Safety Features
Manufactured using high-quality GaAs technology
Robust SOT-343F package for reliability
Compatibility
Suitable for use in a variety of RF circuits and applications
Application Areas
Wireless communications
Radar systems
Instrumentation
Industrial electronics
Product Lifecycle
Current product, not nearing discontinuation
Replacement or upgrade parts available
Key Reasons to Choose This Product
Excellent RF performance with high gain and low noise figure
High output power capability
Compact and reliable package
Suitable for a wide range of RF applications
