Manufacturer Part Number
NE3503M04-T2B-A
Manufacturer
Renesas Electronics Corporation
Introduction
High-frequency power transistor device
Suitable for RF amplifier and switch applications
Product Features and Performance
Drain-source voltage rating of 4V
Drain current rating of 70mA
Frequency range up to 12GHz
Noise figure of 0.45dB
Power gain of 12dB
Product Advantages
Excellent high-frequency performance
High power handling capability
Robust and reliable design
Key Technical Parameters
Technology: HFET (High-Frequency Transistor)
Current (Test): 10mA
Voltage (Rated): 4V
Voltage (Test): 2V
Frequency: 12GHz
Quality and Safety Features
RoHS3 compliant
Manufactured in a controlled environment
Compatibility
Compatible with a wide range of RF and microwave applications
Application Areas
RF amplifiers
RF switches
Wireless communication systems
Radar systems
Test and measurement equipment
Product Lifecycle
Currently in active production
Replacement or upgrade options available from the manufacturer
Several Key Reasons to Choose This Product
Exceptional high-frequency performance
High power handling capability
Reliable and robust design
RoHS compliance for environmental safety
Wide range of compatibility and applications
NE350184C-T1A-ARenesas Electronics Corporation