Manufacturer Part Number
NE3509M04-T2-A
Manufacturer
Renesas Electronics Corporation
Introduction
High-Frequency Transistor (HFET) for RF applications
Product Features and Performance
Output Power: 11dBm
Test Current: 10mA
Rated Voltage: 4V
Gain: 17.5dB
Test Voltage: 2V
Current Rating: 60mA
Frequency: 2GHz
Noise Figure: 0.4dB
Product Advantages
Optimized for high-frequency RF applications
Excellent noise and gain performance
Key Technical Parameters
HFET technology
Small SOT-343F package
Quality and Safety Features
Complies with relevant safety and quality standards
Compatibility
Suitable for a wide range of RF circuit designs
Application Areas
Wireless communication systems
Radar equipment
Satellite communications
Test and measurement instruments
Product Lifecycle
Current product offering, no plans for discontinuation
Replacement or upgrade options available from the manufacturer
Key Reasons to Choose This Product
High-performance RF transistor with excellent noise and gain characteristics
Compact and versatile package suitable for various RF circuit designs
Reliable and consistent quality from a reputable semiconductor manufacturer
Proven track record in diverse RF applications
