Manufacturer Part Number
NE3503M04-T2B-A
Manufacturer
CEL (California Eastern Laboratories)
Introduction
This product is a high-performance GaAs HJ-FET transistor from CEL, suitable for RF and microwave applications.
Product Features and Performance
GaAs HJ-FET technology for high frequency operation
High gain of 12dB
Low noise figure of 0.45dB
Operating frequency up to 12GHz
Current rating of 70mA
Operates at 4V rated voltage
Product Advantages
Excellent high-frequency performance
Low noise characteristics
Compact SMD package design
Key Technical Parameters
Manufacturer Part Number: NE3503M04-T2B-A
Package: 4-SMD, Flat Leads
Technology: GaAs HJ-FET
Current Test: 10mA
Voltage Rated: 4V
Gain: 12dB
Voltage Test: 2V
Current Rating (Amps): 70mA
Frequency: 12GHz
Noise Figure: 0.45dB
Quality and Safety Features
Manufactured to high quality standards by CEL
Meets relevant safety and regulatory requirements
Compatibility
Suitable for use in RF and microwave circuits
Can be integrated into a variety of electronic devices and systems
Application Areas
Wireless communications
Satellite communications
Radar systems
Test and measurement equipment
Product Lifecycle
This product is an active and widely available part
Replacement or upgrade options may be available from CEL or other manufacturers
Key Reasons to Choose This Product
Excellent high-frequency performance with high gain and low noise figure
Compact and efficient SMD package design
Manufactured by a reputable and reliable semiconductor company, CEL
Suitable for a wide range of RF and microwave applications
