SPZT751T1G - onsemi

Manufacturer Part Number

SPZT751T1G

Manufacturer

onsemi

Introduction

The SPZT751T1G is a PNP bipolar transistor manufactured by onsemi. It is a single transistor device designed for a variety of general-purpose amplifier and switching applications.

Product Features and Performance

Power rating of 800 mW

Breakdown voltage of 60 V (Collector-Emitter)

Collector current up to 2 A

DC current gain (hFE) of at least 75 at 1 A, 2 V

Transition frequency of 75 MHz

Product Advantages

Excellent power and current handling capabilities

High breakdown voltage for reliable operation

Strong current gain for efficient amplification

High-frequency performance for fast switching

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 60 V

Collector Current (Max): 2 A

DC Current Gain (hFE): Minimum 75 @ 1 A, 2 V

Transition Frequency: 75 MHz

Power Dissipation: 800 mW

Quality and Safety Features

RoHS3 compliant

Housed in a compact SOT-223 (TO-261) package

Compatibility

Compatible with a wide range of electronic circuits and systems

Suitable for surface-mount applications

Application Areas

General-purpose amplifier circuits

Switching applications

Power supply and control circuits

Audio and instrumentation equipment

Product Lifecycle

Currently in active production

No known plans for discontinuation

Readily available replacements or upgrades from onsemi

Several Key Reasons to Choose This Product

Excellent power and current handling capabilities

High breakdown voltage for reliable operation

Strong current gain for efficient amplification

High-frequency performance for fast switching

RoHS3 compliance for environmental responsibility

Compact SOT-223 (TO-261) package for space-constrained designs