BCP5516TA - Diodes Incorporated

Manufacturer Part Number

BCP5516TA

Manufacturer

Diodes Incorporated

Introduction

Discrete Semiconductor Product

Bipolar Junction Transistor (BJT), NPN type

Product Features and Performance

Operating Temperature Range: -65°C to 150°C

Power Rating: 2W

Collector-Emitter Breakdown Voltage: 60V

Collector Current (Max): 1A

Collector Cutoff Current (Max): 100nA

Collector-Emitter Saturation Voltage: 500mV @ 50mA, 500mA

DC Current Gain (hFE): 100 (Min) @ 150mA, 2V

Transition Frequency: 150MHz

Product Advantages

Reliable performance in a wide temperature range

High current handling capability

Low collector-emitter saturation voltage for efficient operation

High current gain for amplification and switching applications

Key Technical Parameters

Transistor Type: NPN

Packaging: SOT-223-3, TO-261-4, TO-261AA

Packaging Option: Tape and Reel

Quality and Safety Features

RoHS3 Compliant

Compatibility

Surface Mount Mounting Type

Application Areas

Power amplifiers

Switching circuits

Analog and digital circuits

Industrial control systems

Product Lifecycle

Currently in production

Replacement or upgraded models may be available in the future

Key Reasons to Choose This Product

Robust thermal performance

High current handling capability

Efficient operation with low saturation voltage

Suitable for a wide range of electronic circuit applications