BCP55-16 - Diotec Semiconductor

Manufacturer Part Number

BCP55-16

Manufacturer

Diotec Semiconductor

Introduction

High-performance NPN bipolar junction transistor (BJT) for general-purpose applications.

Product Features and Performance

Wide operating temperature range of -55°C to 150°C

Maximum power dissipation of 1.3W

Collector-emitter breakdown voltage up to 60V

Collector current up to 1A

DC current gain (hFE) of at least 100 @ 150mA, 2V

Transition frequency up to 100MHz

Product Advantages

Excellent thermal management

High reliability and ruggedness

Suitable for various general-purpose applications

Key Technical Parameters

Collector-Emitter Breakdown Voltage: 60V

Collector Current (Max): 1A

DC Current Gain (hFE): 100 @ 150mA, 2V

Transition Frequency: 100MHz

Quality and Safety Features

RoHS3 compliant

Suitable for surface mount assembly

Compatibility

Package: SOT-223, TO-261-4, TO-261AA

Application Areas

General-purpose amplifier and switching circuits

Power supplies

Motor control

Industrial electronics

Product Lifecycle

Current product offering, no discontinuation plans

Key Reasons to Choose This Product

Wide operating temperature range

High power handling capability

Excellent electrical characteristics

Compact surface mount package

High reliability and ruggedness

Suitable for a variety of applications