BCP55-10 - Diotec Semiconductor

Manufacturer Part Number

BCP55-10

Manufacturer

Diotec Semiconductor

Introduction

Discrete Semiconductor Product

Single Bipolar Junction Transistor (BJT)

Product Features and Performance

RoHS3 compliant

SOT-223 package

TO-261-4, TO-261AA package options

Operating temperature range: -55°C to 150°C

Maximum power dissipation: 1.3 W

Maximum collector-emitter breakdown voltage: 60 V

Maximum collector current: 1 A

Maximum collector cutoff current: 100 nA

Maximum collector-emitter saturation voltage: 500 mV @ 50 mA, 500 mA

Minimum DC current gain (hFE): 63 @ 150 mA, 2 V

Transition frequency: 100 MHz

Product Advantages

Compact surface mount package

Wide operating temperature range

High current and voltage capabilities

Good frequency performance

Key Technical Parameters

Transistor type: NPN

Packaging: SOT-223, TO-261-4, TO-261AA

Quality and Safety Features

RoHS3 compliant

Compatibility

Surface mount device

Application Areas

General-purpose amplifier and switching applications

Industrial and consumer electronics

Product Lifecycle

Current production

Replacement and upgrade options available

Key Reasons to Choose This Product

Versatile performance in a compact package

Wide temperature and voltage/current range

Good frequency response for various applications

Compliance with industry standards (RoHS3)