SPZT651T1G - onsemi

Manufacturer Part Number

SPZT651T1G

Manufacturer

onsemi

Introduction

This is an NPN bipolar junction transistor (BJT) from onsemi, designed for a variety of power amplifier, switching, and general-purpose applications.

Product Features and Performance

Operating temperature up to 150°C

Power rating of 800 mW

Collector-emitter breakdown voltage up to 60 V

Collector current up to 2 A

Collector cutoff current of 100 nA

Low saturation voltage of 500 mV @ 200 mA, 2 A

Current gain of at least 75 @ 1 A, 2 V

Transition frequency of 75 MHz

Product Advantages

Robust construction and high reliability

Versatile performance for diverse applications

Compact surface-mount package

Key Technical Parameters

Collector-emitter breakdown voltage: 60 V (max)

Collector current: 2 A (max)

Collector cutoff current: 100 nA (max)

Collector-emitter saturation voltage: 500 mV @ 200 mA, 2 A (max)

Current gain: 75 (min) @ 1 A, 2 V

Transition frequency: 75 MHz

Quality and Safety Features

RoHS3 compliant

Reliable performance in high-temperature environments

Compatibility

TO-261-4, TO-261AA package

Surface-mount (SMT) assembly

Application Areas

Power amplifiers

Switching circuits

General-purpose electronic applications

Product Lifecycle

Currently in active production

Replacements or upgrades may be available in the future

Key Reasons to Choose This Product

Robust and reliable performance

Wide operating temperature range

Versatile power handling capabilities

Small surface-mount package for compact designs

Compliance with RoHS regulations for environmental sustainability