Manufacturer Part Number
BCP56-16T1G
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Bipolar Junction Transistor (BJT), Single
Product Features and Performance
RoHS3 Compliant
SOT-223 (TO-261) Packaging
Operating Temperature Range: -65°C to 150°C
Maximum Power: 1.5W
Collector-Emitter Breakdown Voltage: 80V
Maximum Collector Current: 1A
Collector Cutoff Current: 100nA (max)
Collector-Emitter Saturation Voltage: 500mV @ 50mA, 500mA
DC Current Gain: 100 (min) @ 150mA, 2V
Transition Frequency: 130MHz
Surface Mount Mounting
Product Advantages
Compact SOT-223 package
Wide operating temperature range
High voltage and current capabilities
Low saturation voltage
High transition frequency for high-speed applications
Key Technical Parameters
Collector-Emitter Breakdown Voltage: 80V
Collector Current (max): 1A
Collector Cutoff Current (max): 100nA
DC Current Gain (min): 100 @ 150mA, 2V
Transition Frequency: 130MHz
Quality and Safety Features
RoHS3 Compliant
Reliable operation within specified temperature range
Compatibility
Compatible with various electronic circuits and systems requiring high-performance bipolar junction transistors
Application Areas
Power amplifiers
Switching circuits
Voltage regulators
Digital logic circuits
General-purpose amplification and switching
Product Lifecycle
Current product, no indication of discontinuation
Replacements and upgrades may be available from the manufacturer
Key Reasons to Choose This Product
Compact and space-efficient SOT-223 package
Wide operating temperature range for versatile applications
High voltage and current handling capabilities
Low saturation voltage for efficient power conversion
High transition frequency for high-speed performance
RoHS3 compliance for environmentally friendly use