NVF6P02T3G - onsemi

Manufacturer Part Number

NVF6P02T3G

Manufacturer

onsemi

Introduction

The NVF6P02T3G is a P-channel MOSFET transistor from onsemi's automotive product line that meets the AEC-Q101 qualification standard.

Product Features and Performance

20V drain-to-source voltage (Vdss)

±8V gate-to-source voltage (Vgs)

50mΩ max on-resistance (Rds(on)) @ 6A, 4.5V

10A continuous drain current (Id) at 25°C

1200pF max input capacitance (Ciss) @ 16V

3W max power dissipation at 25°C ambient

1V max gate threshold voltage (Vgs(th)) @ 250A

Product Advantages

Automotive-grade AEC-Q101 qualified

Low on-resistance for efficient power switching

High drain current capacity

Compact SOT-223 (TO-261) surface mount package

Key Technical Parameters

P-channel MOSFET transistor

20V drain-to-source voltage

±8V gate-to-source voltage

50mΩ max on-resistance

10A continuous drain current

1200pF max input capacitance

3W max power dissipation

Quality and Safety Features

RoHS3 compliant

Automotive-grade AEC-Q101 qualification

Compatibility

Compatible with standard MOSFET drivers and control circuits

Application Areas

Automotive electronics

Industrial power supplies

Motor control applications

Battery management systems

Product Lifecycle

Current production, no immediate plans for discontinuation

Replacement and upgrade options may be available from onsemi

Key Reasons to Choose This Product

Automotive-grade reliability and performance

Low on-resistance for efficient power switching

High drain current capability

Compact surface mount packaging

RoHS3 compliance for environmental responsibility