NVF2955T1G - onsemi

Manufacturer Part Number

NVF2955T1G

Manufacturer

onsemi

Introduction

This is a p-channel MOSFET transistor from onsemi, designed for automotive and other high-reliability applications.

Product Features and Performance

60V drain-source voltage rating

Low on-resistance of 170mOhm at 750mA, 10V

Continuous drain current of 2.6A at 25°C

Wide operating temperature range of -55°C to 175°C

Fast switching with low gate charge of 14.3nC at 10V

Small SOT-223 (TO-261) surface mount package

Product Advantages

Robust design for demanding automotive environments

Excellent thermal performance with 1W power dissipation

Compact size with space-saving surface mount package

Reliable MOSFET technology for long-term operation

Key Technical Parameters

Drain-Source Voltage (Vdss): 60V

Gate-Source Voltage (Vgs max): ±20V

On-Resistance (Rds(on) max): 170mOhm

Drain Current (Id continuous): 2.6A

Input Capacitance (Ciss max): 492pF

Power Dissipation (max): 1W

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified for automotive applications

Tape and reel packaging for automated assembly

Compatibility

This MOSFET is compatible with a wide range of electronic circuits and systems that require a reliable, high-performance p-channel transistor.

Application Areas

Automotive electronics

Industrial control systems

Power management circuits

Switching applications

Product Lifecycle

This product is an active, in-production device from onsemi. Replacements and upgrades may be available in the future as technology evolves.

Key Reasons to Choose This Product

Robust design and wide operating temperature range for demanding automotive and industrial applications

Excellent thermal performance and low on-resistance for efficient power switching

Compact size and surface mount package for space-constrained designs

Reliable MOSFET technology and AEC-Q101 qualification for long-term operation

RoHS3 compliance and tape-and-reel packaging for easy integration into automated assembly lines