Manufacturer Part Number
STWA45N65M5
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET
Product Features and Performance
650V drain-source voltage
35A continuous drain current at 25°C
78mΩ maximum on-resistance at 17.5A, 10V
3470pF maximum input capacitance at 100V
210W maximum power dissipation at Tc
Product Advantages
Robust design for high-reliability applications
Low on-resistance for high efficiency
High voltage capability
Low gate charge for fast switching
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 78mΩ @ 17.5A, 10V
Drain Current (Id): 35A @ 25°C
Power Dissipation (Ptot): 210W @ Tc
Quality and Safety Features
ROHS3 compliant
TO-247 package for high power handling
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Industrial automation
Product Lifecycle
Currently available
No known plans for discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent power handling and efficiency
Robust and reliable design
High voltage capability
Fast switching performance
Compatibility with a wide range of applications