STWA48N60DM2 - STMicroelectronics

Manufacturer Part Number

STWA48N60DM2

Manufacturer

STMicroelectronics

Introduction

High-performance power MOSFET transistor designed for high-power industrial and automotive applications

Product Features and Performance

N-channel MOSFET with high blocking voltage capability of 600V

Optimized for high-efficiency and high-frequency power conversion

Excellent on-state resistance and fast switching characteristics

Extended operating temperature range of -55°C to 150°C

Product Advantages

Efficient power conversion with low conduction and switching losses

Reliable performance in demanding industrial and automotive environments

Compact and easy-to-integrate package design

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 600V

Maximum Gate-to-Source Voltage (Vgs): ±25V

On-State Resistance (Rds(on)): 79mΩ @ 20A, 10V

Continuous Drain Current (Id): 40A (at Tc = 25°C)

Input Capacitance (Ciss): 3250pF @ 100V

Power Dissipation (Pd): 300W (at Tc = 25°C)

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Through-hole mounting in TO-247-3 package

Application Areas

High-power industrial applications (e.g., motor drives, power supplies, welding equipment)

Automotive power electronics (e.g., hybrid/electric vehicle inverters, DC-DC converters)

Product Lifecycle

This product is currently in production and widely available

Replacement or upgrade options may be available from STMicroelectronics or other manufacturers

Key Reasons to Choose This Product

Excellent power conversion efficiency and switching performance

Reliable operation in harsh industrial and automotive environments

Compact and easy-to-integrate package design

Proven track record and technical support from STMicroelectronics