Manufacturer Part Number
NVD5867NLT4G
Manufacturer
onsemi
Introduction
The NVD5867NLT4G is a single N-channel MOSFET transistor in a DPAK-3 package, suitable for automotive and industrial applications.
Product Features and Performance
Automotive-grade AEC-Q101 qualified
Wide operating temperature range of -55°C to 175°C
Low on-resistance of 39 mΩ @ 11 A, 10 V
High continuous drain current of 6 A (Ta), 22 A (Tc)
Low input capacitance of 675 pF @ 25 V
High power dissipation of 3.3 W (Ta), 43 W (Tc)
Product Advantages
Excellent thermal performance for high-power applications
Robust design for reliable operation in harsh environments
Suitable for a wide range of automotive and industrial uses
Key Technical Parameters
Drain to Source Voltage (Vdss): 60 V
Gate to Source Voltage (Vgs): ±20 V
Threshold Voltage (Vgs(th)): 2.5 V @ 250 A
Drive Voltage (Max Rds On, Min Rds On): 4.5 V, 10 V
Gate Charge (Qg): 15 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
AEC-Q101 automotive qualified
Compatibility
The NVD5867NLT4G is compatible with a wide range of automotive and industrial control applications.
Application Areas
Automotive electronics (e.g., engine control, power steering, lighting)
Industrial motor control
Power supplies
Switching regulators
General-purpose switching applications
Product Lifecycle
The NVD5867NLT4G is an active product and not nearing discontinuation. Replacement or upgrade options are available from onsemi.
Key Reasons to Choose This Product
Automotive-grade reliability and performance
Excellent thermal management for high-power applications
Wide operating temperature range and robust design
Low on-resistance and high current handling capability
Suitable for a variety of automotive and industrial uses