NVD5862NT4G - onsemi

Manufacturer Part Number

NVD5862NT4G

Manufacturer

onsemi

Introduction

High-performance N-channel MOSFET transistor

Designed for automotive and industrial applications

Product Features and Performance

Operates in temperature range of -55°C to 175°C

Low on-resistance (RDS(on) of 5.7 mΩ) for efficient power delivery

High current capability (continuous drain current of 18A at 25°C)

Fast switching characteristics

High gate-source voltage rating (±20V)

Low gate charge (82 nC at 10V) for efficient switching

Product Advantages

Robust and reliable performance in harsh environments

High power efficiency due to low on-resistance

Compact and easy to integrate DPAK package

Key Technical Parameters

Drain-to-Source Voltage (VDS): 60V

Gate-to-Source Voltage (VGS): ±20V

On-Resistance (RDS(on)): 5.7 mΩ

Continuous Drain Current (ID): 18A at 25°C, 98A at Case Temperature

Input Capacitance (Ciss): 6000 pF at 25V

Power Dissipation: 4.1W at Ambient Temperature, 115W at Case Temperature

Quality and Safety Features

RoHS3 compliant

Automotive-qualified AEC-Q101 standard

Compatibility

Suitable for a wide range of automotive and industrial applications

Application Areas

Motor control

Power management

Switching power supplies

Industrial automation

Automotive electronics

Product Lifecycle

Currently in active production

No plans for discontinuation, readily available

Key Reasons to Choose This Product

Excellent thermal and electrical performance for efficient power delivery

Robust and reliable operation in harsh environments

Compact and easy to integrate DPAK package

Automotive-qualified for mission-critical applications

Cost-effective solution for high-volume applications