Manufacturer Part Number
NVD5863NLT4G
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET designed for automotive and industrial applications
Product Features and Performance
Low on-state resistance for efficient power conversion
High current handling capability
Fast switching speed
Wide operating temperature range (-55°C to 175°C)
Robust and reliable design for demanding environments
Product Advantages
Improved energy efficiency
Reduced power losses
Enhanced thermal management
Suitable for harsh operating conditions
Key Technical Parameters
Drain to Source Voltage (Vdss): 60V
Maximum Gate-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 7.1mΩ @ 41A, 10V
Continuous Drain Current (Id): 14.9A (Ta), 82A (Tc)
Input Capacitance (Ciss): 3850pF @ 25V
Power Dissipation: 3.1W (Ta), 96W (Tc)
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Suitable for a wide range of automotive and industrial applications
Application Areas
Power conversion circuits
Motor control
Switching power supplies
Inverters
Industrial automation
Product Lifecycle
Current product, no discontinuation plans
Several Key Reasons to Choose This Product
Excellent efficiency and low power losses
Robust and reliable performance in harsh environments
Versatile and suitable for a wide range of applications
Compliant with automotive and industrial standards
Optimized for energy-efficient power conversion